tm july 2007 ?2007 fairchild semiconductor corporation FDS9958 rev.c www.fairchildsemi.com 1 FDS9958 dual p-channel powertrench ? mosfet FDS9958 dual p-channel powertrench ? mosfet -60v, -2.9a, 105m ? features ? max r ds(on) =105m ? at v gs = -10v, i d = -2.9a ? max r ds(on) =135m ? at v gs = -4.5v, i d = -2.5a ? rohs compliant general description these p-channel logic level specified mosfets are produced using fairchild semiconduc tor?s advanced powertrench ? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. these devices are well suit ed for portable electronics applications: load switching and power management, battery charging and protection circuits. applications ? load switch ? power management mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -60 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) -2.9 a -pulsed -12 e as single pulse avalanche energy (note 3) 54 mj p d power dissipation for dual operation 2 w power dissipation (note 1a) 1.6 power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 40 c/w r ja thermal resistance, junction to ambient (note 1a) 78 device marking device package reel size tape width quantity FDS9958 FDS9958 so-8 330mm 12mm 2500units q2 q1 q2 q1 g2 s1 g1 s2 d2 d2 d1 d1 5 6 7 8 3 2 1 4 pin 1 so-8 d1 d1 d2 d2 s2 s1 g1 g2 free datasheet http:///
FDS9958 dual p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDS9958 rev.c electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -60 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25 c -52 mv/ c i dss zero gate voltage drain current v ds = -48v, -1 p a v gs = 0v t j = 125 c -100 i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -1.0 -1.6 -3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25 c 4 mv/ c r ds(on) static drain to source on resistance v gs = -10v, i d = -2.9a 82 105 m : v gs = -4.5v, i d = -2.5a 103 135 v gs = -10v, i d = -2.9a, t j = 125 c 131 190 g fs forward transconductance v dd = -5v, i d = -2.9a 7.7 s dynamic characteristics c iss input capacitance v ds = -30v, v gs = 0v, f = 1mhz 765 1020 pf c oss output capacitance 90 120 pf c rss reverse transfer capacitance 40 65 pf switching characteristics t d(on) turn-on delay time v dd = -30v, i d = -2.9a, v gs = -10v, r gen = 6 : 6 12 ns t r rise time 3 10 ns t d(off) turn-off delay time 27 43 ns t f fall time 6 12 ns q g total gate charge v gs = 0v to -10v v dd = -30v, i d = -2.9a 16 23 nc q g total gate charge v gs = 0v to -4.5v 8 12 nc q gs gate to source charge 2 nc q gd gate to drain ?miller? charge 3 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = -1.3a (note 2) -0.8 -1.2 v t rr reverse recovery time i f = -2.9a, di/dt = 100a/ p s 26 42 ns q rr reverse recovery charge 21 35 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3. uil condition: starting t j = 25c, l = 3mh, i as = 6a, v dd = 60v, v gs = 10v. b) 135c/w when mounted on a minimun pad a) 78c/w when mounted on a 1 in 2 pad of 2 oz copper free datasheet http:///
FDS9958 dual p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDS9958 rev.c typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 2 4 6 8 10 12 v gs = -3.5v v gs = - 4v v gs = -5v pulse duration = 300 p s duty cycle = 2.0%max v gs = - 4.5v v gs = -10v v gs = -3v -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 024681012 0.5 1.0 1.5 2.0 2.5 v gs = -4.5v v gs = -3.5v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance -i d , drain current(a) v gs = -5v v gs = -4v v gs = -3v v gs = -10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = -2.9a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 60 90 120 150 180 210 240 pulse duration = 300 p s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = -2.9a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 012345 0 2 4 6 8 10 12 v dd = -5v pulse duration = 300 p s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current free datasheet http:///
FDS9958 dual p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDS9958 rev.c figure 7. 0 5 10 15 20 0 2 4 6 8 10 i d = -2.9a v dd = -40v v dd = -20v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -30v gate charge characteristics figure 8. 0.1 1 10 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 60 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 2 3 4 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) -i as , avalanche current(a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r t ja = 78 o c/w v gs = -4.5v v gs = -10v -i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 100 0.01 0.1 1 10 1ms dc 10s 1s 100ms 10ms 0.1ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c 20 200 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 single pulse r t ja = 135 o c/w t a = 25 o c 0.5 v gs = -10v p ( pk ) , peak transient power (w) t, pulse width (s) 200 s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted free datasheet http:///
FDS9958 dual p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDS9958 rev.c figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.005 single pulse r t ja = 135 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted free datasheet http:///
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